2010年5月6日星期四

Samsung announced the availability of an eight gigabit (Gb) OneNAND

The OneNAND chip design is able to read data at up to 70MB/s, which is more than four times the speed of conventional NAND (17MB/s). Combined with a low-voltage design and higher productivity over previous 40nm class chips, Samsung says it is particularly well suited for touchscreen devices and other high resolution smartphone features.

Samsung this week announced the availability of an eight gigabit (Gb) OneNAND chip built on a 30nm manufacturing process. According to Samsung, the higher density memory will pave the way for more features in smartphones, while at the same time driving down the overall cost.

"We are happy to see that our advanced 30nm-class NAND solution is being widely adopted in smartphones," said Sejin Kim, vice president, Flash memory planning/enabling, Samsung Electronics. "The availability of 3Gb OneNAND chip will add considerably to our diverse line-up of advanced mobile memory solutions."

According to Samsung, shrinking down to a 30nm manufacturing process allows the company to raise production by 60 percent over 40nm-class DDR3. And as far as consumers are concerned, the company's Green DRAM lowers power consumption by up to 30 percent over 50nm-class DRAM.
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